Ultra-Compact MOSFET Power Switches
Fairchild´s FDMJ1032C, FDMJ1023PZ and FDFMJ2P023Z MicroFET™ power switches for low-voltage applications are about 65% smaller than power
switches in SSOT-6 packaging and operate with gate voltages as low as 1.5 V.
Utilizing Fairchild’s advanced PowerTrench® technology, the FDMJ1032C, FDMJ1023PZ and FDFMJ2P023Z are housed in a tiny MLP (Molded Leadless Package) measuring only 1.6 x 2 mm, which is 65% smaller than SSOT-6 and 20% smaller than SC-70 packaging. Minimum footprint, low RDS(on) values and low thermal resistance make the power switches perfectly suited for charging control, DC/DC conversion and load switching in portable applications.
Target Markets
These MicroFET™ power switches are designed for portable industrial and portable consumer devices where more and more functions are packed into smaller and smaller PCB space, and high electrical and thermal performance is essential. Target applications include:
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Personal appliances such as mobile phones, digital cameras, electronic games, MP3 players etc. |
These applications also benefit from another MicroFET advantage: the guaranteed operation down to 1.5 V (FDMJ1032C: 1.8 V) makes it easier to drive the MOSFETs from the onboard microcontroller or processor.
Product Features
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SC-75 MLP (1.6 x 2.0 mm)
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Thermal resistance 89 °C/W
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FDMJ1032C:
- One 20 V N-channel and one 20 V P-channel MOSFET
- N-channel RDS(on) of 90 mΩ,
- P-channel RDS(on) of 160 mΩ
(both values at VGS = –4.5 V)
- For use in synchronous DC/DC converters
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FDMJ1023PZ:
- Dual 20 V P-channel MOSFETs
- RDS(on) of 160 mΩ at VGS = -2.5 V
- Ideal for synchronous DC/DC converters or high efficiency load switches
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FDFMJ2P023Z:
- Single 20 V P-channel MOSFET and single 20 V Schottky diode
- RDS(on) of 160 mΩ at VGS = -2.5 V
- For use in asynchronous DC/DC converters or uni-directional load switches |
Additional Information
For detailed specifications please contact
your local SPOERLE Branch Office or visit
www.fairchildsemi.com
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