|
A Perfect Match for Applications up to 20 GHz
To match the trend towards high frequencies,
NXP Semiconductors’ latest NPN SiGe:C (silicon-germanium-carbon) transistor, the BFU725F, delivers extremely low noise and high gain in
the easy-to-use SOT343F package. This microwave transistor is a cost-effective alternative to GaAs devices and perfectly suited for applications operating up to 20 GHz.
Offering an excellent blend of high
switching frequency, high gain and very
low noise, the BFU725F addresses the
demanding requirements of modern high
frequency systems. Its ultra-low noise figure
makes it a perfect solution for sensitive
RF receivers such as those required in advanced
high-performance mobile phones.
Alternatively the transistor´s high cut-off
frequency gives designers an ideal solution
for microwave applications in the 10 to
30 GHz range, such as satellite TV receivers
and automotive collision avoidance radars.
SIGE:C BICMOS Process
The outstanding performance of the BFU725F is due to NXP´s innovative silicon-germanium-carbon (SiGe:C) BiCMOS process – “QU-BiC4X”. Designed specifically with real high-frequency applications in mind, QUBiC4X enables a unique combination of high power gain and excellent
dynamic range. It delivers all the performance
of gallium-arsenide (GaAs) with the reliability of a silicon-based process. In addition, compared to GaAs devices, with the BFU725F no negative biasing voltages are needed, making it a more cost-effective alternative.
Features and Benefits
| > |
Very low noise (0.69 dB at 6 GHz,
0.4 dB at 1.8 GHz) |
| > |
Gain of 10 dB at 18 GHz |
| > |
High maximum stable gain
(Gms of 27.8 dB at 1.8 GHz) |
| > |
High switching frequency
(fT >100 GHz, fmax >150 GHz) |
| > |
Plastic surface-mountable package,
SOT343F |
| > |
SiGe:C process ensures high power gain
combined with excellent dynamic range |
| > |
Cost-effective alternative to GaAs
devices |
From mobile Phones and Automotive to GPS and WLAN
Apart from the applications in mobile
phones and automotive security systems
mentioned above, the BFU725F is ideal for
a number of other applications including
GPS, DECT phones, low noise amplifiers for
microwave communications systems, 2nd
stage amplifiers and mixers in direct broadcast
satellite LNBs (Low Noise Boxes),
satellite radio, and WLAN and CDMA applications.
Additional Information
Flyer BFU725
For detailed specifications please contact
your local SPOERLE Branch Office or visit
www.nxp.com
|
